MOS-Capacitor: Investigating Depletion Region Neutralization

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1msm
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Hello everyone,
My question is about MOS-capacitor,
We know that, If we place +ve gate voltage on p-MOS capacitor holes are repelled from semiconductor-oxide interface leaving behind negative charge due to ionized acceptor ions,This results in a depletion region.
Now the question is, If we injected the required negative charges (electrons) into semiconductor from its back contact is the depletion region is going to vanish(neutralization)...??
 
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1msm said:
Hello everyone,
My question is about MOS-capacitor,
We know that, If we place +ve gate voltage on p-MOS capacitor holes are repelled from semiconductor-oxide interface leaving behind negative charge due to ionized acceptor ions,This results in a depletion region.
Now the question is, If we injected the required negative charges (electrons) into semiconductor from its back contact is the depletion region is going to vanish(neutralization)...??

Yes, if we hold the gate voltage constant. Injecting charges would change the threshold voltage of the capacitor.