Stiffness/Residual Vector Error - NaN/Inf findings

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SUMMARY

The forum discussion centers on a simulation issue encountered while using COMSOL 5.0 for a semiconductor device simulation. The user reports NaN/Inf errors when sweeping gate voltages below -13V, despite successful simulations within the range of -13V to 20V. The problem appears to be related to undefined values in the stiffness vector and residual vector errors, rather than convergence issues. The user seeks advice on how to effectively simulate below the problematic voltage threshold.

PREREQUISITES
  • Understanding of semiconductor device physics, particularly n-doping.
  • Familiarity with COMSOL Multiphysics 5.0 and its simulation capabilities.
  • Knowledge of boundary conditions and their impact on simulation results.
  • Basic grasp of numerical methods related to stiffness and residual vectors in simulations.
NEXT STEPS
  • Investigate COMSOL's documentation on handling NaN/Inf errors in simulations.
  • Explore techniques for refining mesh settings in COMSOL to improve simulation stability.
  • Learn about voltage sweeping techniques and their limitations in semiconductor simulations.
  • Research alternative simulation tools or methods that may handle lower voltage ranges more effectively.
USEFUL FOR

This discussion is beneficial for semiconductor engineers, simulation specialists, and researchers working with COMSOL who are troubleshooting voltage-related simulation errors.

Bera Icli
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Hi,

I am especially writing this, because there is no specific explanation I found online. I checked the BCs and other variables, but could not find any mistakes.

I am working on a semiconductor device that is basically n-doped homogeneously, has sizes 50um-15nm, and with a drain voltage 1V on the left boundary, source voltage 0V on the right, and a varying gate voltage at its top with a thin insulator gate of. Although I work on a supercomputer with 36gb ram, and making a mesh not much detailed, I gather the error attached as image.

The error does not happen when I sweep the gate voltage from around -13V to 20V, but whenever I start it from around -15V it just happens. The error contains NaN/Inf findings in the solution, not a convergence error or a iteration one I guess, but somehow a calculation error. The simulation works well for -13V to 20V of gate voltage, giving a nice plot, but not for below -13V.

Sometimes it is an undefined value in stiffness vector, sometimes a residual vector error.

I want to plot the ID-VG graph accordingly, but cannot see below -13V. Can't I simulate after some voltage level?

Any comments for a better simulation?

Thanks,

~bera
 

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The amount of information you gave about what you are doing is minuscule. I don't see how anyone could help you, since you don't even mention which program you are using (I would guess COMSOL from the screenshot), nor what you are solving for.
 
Thank you for replying DrClaude. Yes, unfortunately it escaped my notice while writing the post, I am using COMSOL 5.0. I hope someone can help me out with this. Although it seems COMSOL will not be capable of solving while sweeping below a specific voltage from gate insulator, I hope my problem will be either solved or commented as an insoluble problem.

Is that possible to solve the problem as indicated in the screenshot and continue to keep solve below some voltage level as well.
 
Most likely this can only be answered by an "old timer". I am making measurements on an uA709 op amp (metal can). I would like to calculate the frequency rolloff curves (I can measure them). I assume the compensation is via the miller effect. To do the calculations I would need to know the gain of the transistors and the effective resistance seen at the compensation terminals, not including the values I put there. Anyone know those values?

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