The Moss-Burstein shift is a phenomenon observed in semiconductors, particularly when doping levels reach a degenerate state. As the doping concentration increases, the Fermi level rises into the conduction band, resulting in an increase in the observed band gap during absorption measurements. This occurs because electrons can only be excited to states above the Fermi level, which is now within the conduction band, leading to the equation: Observed band gap = Actual band gap + Moss-Burstein shift. This effect is significant in understanding semiconductor behavior under high doping conditions.
PREREQUISITESStudents and professionals in semiconductor physics, materials scientists, and engineers involved in semiconductor device fabrication and analysis.
