Variation of Potential outside a PN junction

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SUMMARY

The discussion focuses on the potential variation across a PN junction at equilibrium, specifically in a step junction scenario. It establishes that the potential in the P region is positive, transitioning to negative in the N region due to the migration of charge carriers. The equation for potential, V=Q/4ΠΣ, is applied to explain the behavior of potential across the junction, highlighting the neutrality of p-type and n-type semiconductors. The interaction between free carriers results in a positive region near the junction and a negative region adjacent to it.

PREREQUISITES
  • Understanding of semiconductor physics, specifically p-type and n-type materials.
  • Familiarity with the concept of charge carriers (electrons and holes).
  • Knowledge of potential equations, particularly V=Q/4ΠΣ.
  • Basic principles of equilibrium in semiconductor junctions.
NEXT STEPS
  • Study the behavior of charge carriers in p-n junctions under various conditions.
  • Learn about the effects of external voltage on PN junctions.
  • Explore the concept of depletion regions in semiconductor physics.
  • Investigate the applications of PN junctions in electronic devices.
USEFUL FOR

Students and professionals in electrical engineering, semiconductor physics, and anyone seeking to deepen their understanding of PN junction behavior and potential variations.

Amal Thejus
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Homework Statement


1. We are considering a step junction at equilibrium(no external voltage applied).

2. The potential variation is shown as negative potential at P region(which is shown as constant) and increasing through the transient region to become positive in the n region.

Homework Equations


Potential V=Q/4ΠΣ

The Attempt at a Solution


1. As per the equation for potential, the value of potential at the P region should be positive(since Q=positive here) and shown at a higher level than the negative potential in the N region(since Q=negative here).

2.Also the positive potential at P region should drop to a negative value in the transition region next to it(because of the presence of electrons there at equilibrium) and slowly increase to become positive potential as the transient region changes from negative to positive. As the positive region comes to an end the graph should again become negative due to the electrons in the N region.
 

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A p or n-type semiconductor is neutral. When an n-type piece is in contact with a p-type piece, some of the free carriers migrate to the other side, electrons from the n-type part and holes form the p-type part. These holes make the region near the pn junction positive, and the electron, having diffused to the p-type side, make a negative region near the junction.
 
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ehild said:
A p or n-type semiconductor is neutral. When an n-type piece is in contact with a p-type piece, some of the free carriers migrate to the other side, electrons from the n-type part and holes form the p-type part. These holes make the region near the pn junction positive, and the electron, having diffused to the p-type side, make a negative region near the junction.

Thank you so much. That was kind of a stupid question right. I can't believe I missed the material being neutral. Thanks again.
 

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