What Are the Average Tunneling Electron Energies in a Ti/Nb2O5/Ti MIM Device?

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PhilQ
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If we have a MIM device of Ti/Nb2O5/Ti at room temperature (300K), with a measured barrier height(s) of 0.0eV, the insulator thickness is say 2nm, and let's call the electron affinity of Nb2O5 4eV, and the Work function of Ti 4eV (for the sake of a simplified question), what is the average / typical energies of electrons that tunnel through the insulator?

I am guessing there will be some wildly different answers.
 
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PhilQ said:
with a measured barrier height(s) of 0.0eV

How did you "measure" a barrier height of 0.0 eV?
 
Lord Jestocost said:
How did you "measure" a barrier height of 0.0 eV?

I didn't but it is reported, not really the gist of the question though. Ti/Nb2O5/Ti has a close to zero total barrier height as measured by others.

I am coaxing for people to have a stab at the tunnelling electron energy, not expecting a precise answer but rather something like;

A. approx 0.0157eV
B. approx 4eV
C. definitely no idea

and then some sort of justification if A or B

This might look like 3 card monte, but it is serious.