What is the significance of n+, p+, and p doping in silicon wafers?

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Discussion Overview

The discussion centers on the significance of n+, p+, and p doping in silicon wafers, particularly in relation to their resistivity and conductivity. Participants explore the definitions and implications of these doping types in the context of semiconductor applications.

Discussion Character

  • Technical explanation, Conceptual clarification

Main Points Raised

  • One participant notes that n+ and p+ indicate heavily doped silicon with low resistivities, while p doping has a higher resistivity.
  • Another participant explains that the plus sign denotes "extrinsic" doping, which results in high conductivity, typically used in the outer layers of p-i-n diodes.
  • A different viewpoint suggests that n+ and p+ are used for silicon with resistivity in the milliOhm-cm range, while n and p are used for higher resistivities above an Ohm-cm, claiming this is not inconsistent with existing literature.

Areas of Agreement / Disagreement

Participants present varying interpretations of the definitions and implications of n+, p+, and p doping, indicating that multiple competing views remain without a clear consensus.

Contextual Notes

There are limitations regarding the definitions of doping levels and their corresponding resistivities, which may depend on specific contexts or applications in semiconductor technology.

donquixote17
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I'm reading an article that has n+, p+, and p doped silicon wafers.
http://iopscience.iop.org/0953-8984/10/44/001"
I hadn't heard of n+ or p+ before, just n and p. I noticed in the article that n+ and p+ had really low resistivites (10^-2 Ohm-cm) and p had a resistivity of about 10 Ohm-cm.

So does the plus sign just mean it is heavily doped or is there a different meaning to the + sign?
 
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Yes, the plus sign refers to "extrinsic" doping such that the material is highly conductive. This is used typically in the outer layers of p-i-n diodes. By contrast, the i layer is "intrinsic," or undoped and highly resistive.
 
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I usually use n+ and p+ for Si that is doped heavily enough that the resistivity is down in the range of milliOhm-cm. When it's greater than an Ohm-cm, I call it n or p type. I think that's not completely inconsistent with the literature.
 
Great. Thanks so much!
 

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