Hi guys, the Bethe bloch (BB) equation, in combination with the material density, gives the energy deposited in the material per unit path length. One of the terms in the BB equation is the maximum energy transferred to an electron by the incident particle. So i am assuming, the energy loss calculated by the BB equation, is assumed to be transferred to a single electron and not numerous electrons? If the energy is transferred to a single electron, then this electron will cause further ionization, at a rate of one electron every 3.65 eV for Silicon. For example, a minimally ionizing particle will deposit 3.8 MeV per cm, or 380 eV per micron in Silicon. Does this mean a minimally ionizing particle will transfer 3.8 MeV to a single electron in 1 cm of Si, then this electron will cause further ionization? Similarly, if i was working in microns, does this mean that on average 380 eV will be transferred to a single electron per micron in silicon? I know atom spacing’s are approximately in the Angstroms range. For the most accurate calculation of the energy transferred to a single electron, should dEdX be calculated every Angstrom, as opposed to every micron or cm ? Is this not done due to increased processing times for computers? Thanks.