Biased nanoelectronic device simulation

In summary, the conversation discusses the use of Density Functional Theory (DFT) or Hartree-Fock Theory based atomistic simulators for simulating nanoelectronic devices, specifically nano-scale field effect transistors. However, the listed DFT software does not mention its capability for simulating devices under electrical bias. The conversation also mentions the possibility of using time-dependent DFT for quantum transport in molecular devices and suggests solving Poisson and Schrodinger equations for traditional FETs.
  • #1
carbon9
46
0
Hi,

I wonder if there is a Density Functional Theory or Hartree-Fock Theory based atomistic simulator that can be used to simulate nanoelectronic devices for example nano-scale field effect transistors?

I looked at the documentations of SIESTA and other DFT software listed at https://www.physicsforums.com/showthread.php?t=132559&highlight=siesta but none of them mentions to be able to simulate these electronic devices, i.e. deices or systems under electrical bias. Do you know any software to simulate biased nanoelectronic devices?

Regards,
 
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  • #2
Hi,

This might help

http://www.koders.com/

However, you can write a simple code by solving Possion and Schrodinger equations self-consistently.

Bests,
 
  • #3
Time-dependent DFT can describe quantum transport in some molecular devices.
For traditional FET, my last post can be the answer, in this case, DFT is very tough!
 

1. What is biased nanoelectronic device simulation?

Biased nanoelectronic device simulation is a computational method used to model the behavior of nanoscale electronic devices under different voltage or current conditions. It involves using mathematical equations and algorithms to simulate the movement of electrons and predict the behavior of the device.

2. Why is biased nanoelectronic device simulation important?

Biased nanoelectronic device simulation is important because it allows scientists and engineers to design and optimize electronic devices at the nanoscale, which is essential for the development of advanced technologies such as quantum computing and nanoelectronics. It also saves time and resources by reducing the need for physical prototypes.

3. What are the challenges of biased nanoelectronic device simulation?

One of the main challenges of biased nanoelectronic device simulation is accurately modeling the complex behavior of electrons at the nanoscale. This requires advanced mathematical models and high-performance computing resources. Additionally, the simulation results may not always match the physical behavior of the device due to uncertainties and limitations in the simulation.

4. How is biased nanoelectronic device simulation performed?

Biased nanoelectronic device simulation involves creating a mathematical model of the device and its components, such as transistors and interconnects, and defining the electrical properties of each component. The simulation software then uses this information to solve the equations and simulate the behavior of the device under different bias conditions.

5. What are the applications of biased nanoelectronic device simulation?

Biased nanoelectronic device simulation has various applications in the development and optimization of electronic devices, such as transistors, diodes, and integrated circuits. It is also used in research for studying the behavior of novel materials and structures at the nanoscale and predicting their potential applications in future technologies.

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