- #1

MSM

- 12

- 0

I hope this is the right place to ask.

I have been working with modeling of thermal conductance, G [W/K] of semi-conductor nanowires as a function of temperature.

To start, thermal conductivity of a nanowire is modeled using BTE (Boltzmann Transport Equation). Then the conductance is calculated based on the following relation:

[itex]G= k * A/L[/itex]

where L is the length of the nanowire and A is the cross sectional area of the nanowire (πr

^{2}) and k is the thermal conductivity

Now I have a plot of thermal conductance vs temperature for a specified diameter and length of a silicon nanowire.

Now the next step I want to model the thermal boundary conductance, G

_{b}[W/m

^{2 }K], which is the reciprocal of thermal boundary resistance, R

_{b}[m

^{2}K/W]. I used DMM (diffuse Mismatch Model) to model this as a function of temperature.

The main goal of doing this is to have a plot showing how boundary conductance is compared to sample conductance over a wide temperature range (5 K to 800 K) (where is it more critical at low temperatures). I am confused because we have different units so I can't simply make 2 y-axis and make the comparison and to my understanding multiplying by area does not seem right..whats the right approach?