Can Aluminum Actually Steal Electrons from Silicon in a Diode?

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SUMMARY

Aluminum can indeed interact with silicon in a diode by creating holes in the silicon lattice. When aluminum, which has three valence electrons, diffuses into a silicon matrix, it associates with four silicon atoms. This interaction results in a hole due to the aluminum's inability to share enough electrons with the silicon atoms, as it only has three electrons to bond with four neighboring silicon atoms. This phenomenon is crucial for understanding the behavior of p-type semiconductors in diode applications.

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Electrical engineers, materials scientists, and students studying semiconductor physics will benefit from this discussion, particularly those interested in diode functionality and semiconductor doping processes.

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I have a question regarding diodes. Aluminum has 3 valence electrons, and normally bonds with 3 atoms in order to rid itself of the valence electrons, right? Okay, but when mixed in a matrix of silicon atoms, it doesn't have enough electrons to share with the silicon. This makes a hole. Okay, but according to my books, this hole is swapped between the silicon atoms. It says the aluminum binds with three neighboring silicon atoms, and then it says that it steals one from the silion, in order to fill it's shell, well it's already filled, 3 neighbors!
Help please.
 
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I've answered my question by myself, but thanks anyway.
 
The crystal lattice of silicon makes each atom bound to 4 neighboring atoms. If you diffuse an Al atom in the crystal, it will associate with 4 adjacent Si atoms. Since it has only 3 electrons to share, there is a hole.
 

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