Ravian
- 40
- 0
can we estimate effective masses of electron and hole from the band structure if yes how? can somebody explain with reference to Si band structure?
Effective masses of electrons and holes can be extracted from the band structure of silicon (Si) using specific methodologies. By employing the program IGOR, one can generate energy distribution curves (EDCs) from the band structure E(k) for selected momentum values. These EDCs are fitted using a Voigt function to determine peak maxima, which are then plotted against crystal momentum. Finally, the effective mass is calculated using the formula m* = ħ²(d²E/dk²)⁻¹, where E represents the band structure dispersion.
PREREQUISITESResearchers in semiconductor physics, materials scientists, and anyone involved in the analysis of electronic properties of silicon and other semiconductors.
Ravian said:can we estimate effective masses of electron and hole from the band structure if yes how? can somebody explain with reference to Si band structure?
fk08 said:dear ravian,
yes, you can extract the effective mass from your bandstructure.
I you have a bandstructure E(k) you can extract energy distribution curves (take the program IGOR for instance) for the momentum range of interest, e.g. E(k1),E(k2) and so on.
These photoemission peaks you can then fit with a voigt function. From this fit you can
extract the peak maxima and plot them versus the crystal momentum. In a last step you can fit these data points assuming a dispersion E = hbar^2*k^2/(2m*)