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Carrier transport in semiconductor

  1. Jun 18, 2010 #1
    1. The problem statement, all variables and given/known data

    in Intrinsic GaAs,electron and hole mobility are 0.85 and 0.04 meter square/volt-sec
    and corresponding effective mass are 0.068m and 0.5m, where m=9.11*10^(-31)kg.
    band gap energy is 1.43 eV at 300K.
    ---calculate intrinsic carrier concentration(!) and Conductivity.
    2. Relevant equations
    the eqs I know related with mobility are;
    mu=v/F=e*tau/m(eff)
    conductivity=e(n*mu[n]+p*mu[p]).
    mu=mobility
    e=charge of carrier(say electron)

    3. The attempt at a solution

    but what are the formulae to relate between mobility,carrier concentration using
    effective mass?
    if carrier concentration is calculated, then conductivity=e(n*mu[n]+p*mu[p]).

    please help me.anyone.
     
  2. jcsd
  3. Jun 20, 2010 #2
    intrinsic carrier concentration=(2.33 * (10)^43) * ( ..(.. (Mn*Mp) / (M^2).. ) ^(3/2).. ) * (T ^3) * (e ^ (-Eg/kT) )
    Mn=effective mass of electron
    Mp=effective mass of hole
    M=mass of electron
    T=temperature in kelvin
    Eg=energy gap at particular T
    k=boltzman constant
    e=mathametical constant e.
    i kept dots between bracket so as to make it easy to identify,those dots have nothing to do with the formula..
     
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