Hello. I've learned that in PN junction, forward-biasing pushes holes in P-type and electrons in N-type forward junctions so depletion width is reduced. Is it due to that in N-type (P-type), pushed electrons (holes) are recombined with holes (electrons) in depletion zone? And what is true identity of current in forward-bias? In this biasing, I guess there are two kinds of current; charge carrier diffusion due to carrier concentration imbalance at the junction (diffusion current) and drifted carrier pushed by external field in biasing (drift current). Is forward-biasing current consisted of both types of current or one of them?