Hello. I've learned that in PN junction, forward-biasing on it pushes holes in P-type and electrons in N-type toward the junction so depletion width is reduced. Is it due to that in N-type side(P-type side), pushed electrons (holes) are recombined with holes (electrons) in depletion zone? And what is true identity of current in forward-biasing? In this bias, I guess there are two kinds of current; diffusion current by charge carrier diffusion due to carrier concentration imbalance at the junction and drift current by drifted carrier pushed by external field of biasing. Is forward-biasing current consisted of both types of current or one of them? Here, I'm only thinking about majority carriers but if there are also contributions from minority carriers, I'll appreciate if you also cover this.