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Godwin Kessy
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Are the electrons in the donor and recipient energy bands in doped material involved in conduction of electricity, and why?
Godwin Kessy said:Are the electrons in the donor and recipient energy bands in doped material involved in conduction of electricity, and why?
Godwin Kessy said:It's not clear as we all see that they are not included in the calculations.
Donor and recipient energy bands refer to the energy levels or states that are created in a semiconductor material when it is doped with impurities. These energy bands play a crucial role in the electrical conductivity of the semiconductor.
The presence of donor and recipient energy bands in a doped semiconductor can increase its conductivity by providing extra charge carriers. Donor energy bands add free electrons, while recipient energy bands create free electron holes, both of which contribute to the conductivity of the material.
The key difference between donor and recipient energy bands is the type of impurity that creates them. Donor energy bands are created by adding impurities with extra valence electrons, while recipient energy bands are created by adding impurities with fewer valence electrons.
Donor and recipient energy bands are formed when impurities are introduced into the crystal lattice of a semiconductor material during the manufacturing process. The impurities create localized energy levels within the band gap of the semiconductor, which can then act as donor or recipient energy bands.
The ability to control and manipulate donor and recipient energy bands in doped semiconductors is crucial for many technological applications. These include the development of transistors, solar cells, and other electronic devices, as well as the creation of different types of sensors and detectors.