Dynamic Resistance: Answers to Questions

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SUMMARY

The discussion centers on dynamic resistance in semiconductors, particularly in diodes and transistors. Dynamic resistance is defined as the slope of the voltage-current curve (r=d(V)/d(I)) and is always a small-signal resistance, distinct from static resistance, which is the DC voltage-to-current ratio at a specific operating point. Both static and dynamic resistances arise from the collisions of electrons with atoms in the semiconductor material. The internal resistance in diodes, including Zener diodes, is influenced by both the depletion layer and the flow of electrons.

PREREQUISITES
  • Understanding of semiconductor physics
  • Familiarity with diode characteristics and behavior
  • Knowledge of voltage-current (V-I) characteristics
  • Basic principles of small-signal analysis
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  • Study the characteristics of Zener diodes and their applications
  • Learn about small-signal models in semiconductor devices
  • Explore the impact of temperature on semiconductor resistance
  • Investigate the differences between static and dynamic resistance in various semiconductor devices
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Electrical engineers, semiconductor researchers, and students studying electronics who seek to deepen their understanding of dynamic resistance and its implications in semiconductor devices.

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I'm studying semiconductors and i might need a little help with some questions:

First the dynamic resistance is the internal resistance of the diodes , but it's called dynamic because it isn't constant, right?

Does all semiconductors, pure and doped, have internal/dynamic resistance? The reason i claim this is because diodes and transistors have such a resistance and they are made of doped semiconductors. But some pure semiconductor devices like the photoresistor also have a resistance that changes with temperature or light.

Is that internal resistance caused by the collision of the flowing electrons with the atoms of the semiconductive materials just like in ordinary resistors? If so, this explains why temperature and light can decreace it.

In diodes and especialy the zener diodes is the internal resistance caused by the flowing electrons colliding with the semiconductor atoms, or by the depletion layer, or both?

Thanks.
 
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For each device with a non-linear voltage-current chracteristic we can define two resistances:
* The static resistance R is simply the DC voltage-to-current ratio at a certain operating point, and
* the dynamic resistance depends on the slope of this voltage-to-current curve and is defined as r=d(V)/d(I).
Hence, the dynamic resiatnce is defined using the tangent at the corresponding operating point. This dynamic resistance is always a small-signal resistance only.
* Example: The exponential I=f(V) curve for a pn diode always has a static resistance R that is larger than the dynamic resistance r (R>r).
 
Last edited:
LvW said:
For each device with a non-linear voltage-current chracteristic we can define two resistances:
* The static resistance R is simply the DC voltage-to-current ratio at a certain operating point, and
* the dynamic resistance depends on the slope of this voltage-to-current curve and is defined as r=d(V)/d(I).
Hence, the dynamic resiatnce is defined using the tangent at the corresponding operating point. This dynamic resistance is always a small-signal resistance only.
* Example: The exponential I=f(V) curve for a pn diode always has a static resistance R that is larger than the dynamic resistance r (R>r).
But both static and dynamic resistances are physicaly the same thing - the electrons trying to make their way through the semiconductor material, colliding with it's atoms and slowing down. Right? That's the internal resistance. And in diode there is this resistance and the resistance which the pn junction causes to the current flow( the usualy 0,7 volts that you need to apply to it in order to turn it on). Is that right?
 
Of course, both static and dynamic resistances are "internal" resistances.

Quote: it's called dynamic because it isn't constant, right?

No - that`s not correct. As I have mentioned - for a non-linear V-I characteristic both (static and dynamic) are not constant.
The dynamic resistance r applies to (small) signal changes only !
 
Most likely this can only be answered by an "old timer". I am making measurements on an uA709 op amp (metal can). I would like to calculate the frequency rolloff curves (I can measure them). I assume the compensation is via the miller effect. To do the calculations I would need to know the gain of the transistors and the effective resistance seen at the compensation terminals, not including the values I put there. Anyone know those values?

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