History of GaN & GaP Technology

[gjfelix2001]

Hello, i am looking for papers about GaN and GaP "history", i mean serious papers or sources, everything will be useful. Thanks.

 

[Astronuc]

One could start with references on Wikipedia -

http://en.wikipedia.org/wiki/GaN

http://en.wikipedia.org/wiki/GaP

Perhaps better site -

http://www.msm.cam.ac.uk/GaN/
The Cambridge Centre for Gallium Nitride is based in the Department of Materials Science and Metallurgy at the University of Cambridge.

Interesting site on GaN - http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaN/index.html

http://panasonic.co.jp/corp/news/official.data/data.dir/en060627-2/en060627-2.html

World's First Gallium Nitride (GaN)-On-Insulator Substrate
http://www.azom.com/news.asp?newsID=2616

On can google on "gallium nitride","GaN" and similarly "gallium phosphide","GaP" and find a large number of references.

 

[charng]

Sure, I would be happy to provide information on the history of GaN and GaP technology. GaN (gallium nitride) and GaP (gallium phosphide) are both III-V compound semiconductors that have been extensively studied and used in various electronic and optoelectronic devices.

The history of GaN technology dates back to the 1960s when researchers first started studying its properties and potential applications. In 1969, the first GaN-based light-emitting diode (LED) was developed by researchers at Monsanto Company. However, it was not until the 1990s that GaN LEDs became commercially available, with the introduction of blue and green LEDs by Nichia Corporation.

In the early 1990s, researchers also began exploring the use of GaN in high-power electronic devices, such as transistors and lasers. One of the key breakthroughs in GaN technology was the development of the heterostructure field-effect transistor (HFET) in 1993 by researchers at Cornell University and NEC Corporation. This led to the commercialization of GaN-based high electron mobility transistors (HEMTs) by companies like Cree Inc. and RF Micro Devices in the late 1990s.

The use of GaN in optoelectronic devices also expanded in the late 1990s and early 2000s with the development of blue and white GaN-based LEDs, which are now widely used in various lighting applications. In 2006, the first GaN-based laser was demonstrated by researchers at the University of California, Santa Barbara, paving the way for the development of GaN-based blue laser diodes.

Similarly, the history of GaP technology can be traced back to the 1960s when researchers first started studying its properties and potential applications. In 1966, the first GaP-based LED was developed by researchers at General Electric Company. However, it was not until the 1970s that GaP LEDs became commercially available, with the introduction of red and yellow LEDs by Hewlett-Packard (now Agilent Technologies).

In the 1980s, researchers began exploring the use of GaP in high-power electronic devices, such as transistors and lasers. One of the key breakthroughs in GaP technology was the development of the metal-semiconductor field-effect transistor (MESFET) in 1983 by researchers at the University of Colorado and Hughes Research