How Fast Do Electrons Drift in a Silicon Resistor?

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de1337ed
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Problem:

An Si resistor is at 300Kelvin, and is 100μm long, 1μm thick, 5μm wide. The conductivity is 7.128 Ωcm. The resistance is 28058Ω. A voltage of 5v is applied. What is the drift velocity of the electrons, given that n = 1.01x103?
Other constants:
μn = 1350 cm2/Vsec
μp = 450 cm2/Vsec
---
My work:
So basically,
I have the formula Jn,drift = qn(μnE).
The question asks for drift velocity, does that mean I'm trying to find Jn,drift or just the mobility factor μnE? What exactly is Jn,drift? In either scenario, how do I find E field if I'm only given a voltage? It's not like I can integrate b/c Voltage is constant through the resistor.
I was also considering using I = nqvdA. But I was getting some outrageous velocity with this.
Ideas?
Thank you.
 
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de1337ed said:
Problem:

An Si resistor is at 300Kelvin, and is 100μm long, 1μm thick, 5μm wide. The conductivity is 7.128 Ωcm. The resistance is 28058Ω. A voltage of 5v is applied. What is the drift velocity of the electrons, given that n = 1.01x103?
Other constants:
μn = 1350 cm2/Vsec
μp = 450 cm2/Vsec
---
My work:
So basically,
I have the formula Jn,drift = qn(μnE).
The question asks for drift velocity, does that mean I'm trying to find Jn,drift or just the mobility factor μnE? What exactly is Jn,drift? In either scenario, how do I find E field if I'm only given a voltage? It's not like I can integrate b/c Voltage is constant through the resistor.
I was also considering using I = nqvdA. But I was getting some outrageous velocity with this.
Ideas?
Thank you.

Jn,drift is probably the drift current of negative carriers (electrons). In a semiconductor you may have also drift current of holes as well as diffusion currents of both types of carriers.