Can any please help me in solving the following two questions(adsbygoogle = window.adsbygoogle || []).push({});

Q1

A Si sample is doped with 10^16 per cm cube boron atoms and a certain

number of shallow donors. The fermi level (Ef) is 0.36 eV above Ei

(intrinsic energy level) at 300K. What is the donor concentration Nd?

For Si at 300K ni(intrinsic carrier concentration) = 1.5 x 10^10 per

cm cube

Q2

A Si sample contains 10^16 per cm cube In(indium) acceptor atoms and

a certain number of shallow donors. The In (indium) acceptor level is

0.16 eV above Ev(Valence band edge), and Ef is 0.26eV above Ev at

300K. How many in atoms in cm per cube are unionized (i.e. neutral)?

For Si at 300K ni(intrinsic carrier concentration) = 1.5 x 10^10 per

cm cube

There is no additional information available. Please state the

question number when answering and indicate any formulas used.

The following equations may prove useful

n(o) x p(o) = ni^2

n(o) = ni x e((Ef-Ei))/KT)

p(o) = ni x e((Ei-Ef)/KT)

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# How to calculate the carrier concentration

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