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Solid State Physics- Finding concentration of donor atoms (Nd)

  1. Oct 23, 2011 #1
    1. The problem statement, all variables and given/known data

    Silicon at T= 300K contains acceptor atoms at a concentration of Na = 5*10^15 cm-3. Donor atoms are added forming an n-type compensated semiconductor such that the fermi level is 0.215 eV below the conduction band edge. What concentration of donor atoms are added?


    2. Relevant equations
    I have one equation byt i still have one unknown:





    3. The attempt at a solution

    here is what i have:
    (ni^2) = (Nd- 5*10^15) * po
     
  2. jcsd
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