Silicon at T= 300K contains acceptor atoms at a concentration of Na = 5*10^15 cm-3. Donor atoms are added forming an n-type compensated semiconductor such that the fermi level is 0.215 eV below the conduction band edge. What concentration of donor atoms are added?
I have one equation byt i still have one unknown:
The Attempt at a Solution
here is what i have:
(ni^2) = (Nd- 5*10^15) * po