SUMMARY
The discussion focuses on calculating the gate-to-drain voltage (Vgd) and gate-to-source voltage (Vgs) for the load NMOS in a loaded NMOS inverter circuit. Given parameters include Vdd = 5V, Vgg = 10V, and Kn' = 20uA/V². Participants clarify that the load NMOS operates in linear mode, and they emphasize the importance of using simulation tools like PSpice to analyze the circuit behavior across different input voltages (Vi). Theoretical values for output high (Voh), output low (Vol), and mid-point voltage (Vm) were derived from simulations, indicating Voh = 5V, Vol = 1V, and Vm = 2.5V.
PREREQUISITES
- Understanding of NMOS transistor operation and characteristics
- Familiarity with circuit simulation tools like PSpice
- Knowledge of voltage transfer characteristics (VTC) in digital circuits
- Basic concepts of MOSFET equations and parameters (Kn', W/L ratios)
NEXT STEPS
- Learn how to simulate NMOS circuits using PSpice for accurate voltage analysis
- Study the impact of varying input voltages (Vi) on NMOS inverter performance
- Explore the derivation of voltage transfer characteristics (VTC) for NMOS inverters
- Investigate the differences between linear and saturation modes in NMOS operation
USEFUL FOR
Electrical engineering students, circuit designers, and anyone involved in the analysis and design of NMOS inverter circuits will benefit from this discussion.