SUMMARY
This discussion focuses on testing diodes using an ohmmeter, specifically analyzing the resistance values obtained in both forward and reverse bias conditions. It highlights that a diode exhibits very high resistance in reverse bias, typically due to the minimal reverse saturation current (approximately 2e-15A for silicon diodes), while forward bias shows lower resistance around 7 ohms. The relationship between voltage and current in a diode is defined by the equation i = i0exp(V/VT), where VT is approximately 26 mV at room temperature. The breakdown voltage for common diodes like the 1N4148 is around 100V, indicating the conditions under which a diode may conduct significantly more current than the reverse saturation current.
PREREQUISITES
- Understanding of diode characteristics and behavior
- Familiarity with ohmmeters and their measurement principles
- Knowledge of semiconductor physics, particularly p-n junctions
- Basic grasp of electrical concepts such as voltage, current, and resistance
NEXT STEPS
- Study the diode equation and its implications on current flow
- Learn about the breakdown characteristics of various diode types
- Explore the concept of dynamic resistance in diodes
- Investigate the differences between silicon and germanium diodes
USEFUL FOR
Electronics students, hobbyists, and engineers interested in understanding diode behavior and testing methods using ohmmeters.