Ohmmeter & Diodes Homework: Understanding Results

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SUMMARY

This discussion focuses on testing diodes using an ohmmeter, specifically analyzing the resistance values obtained in both forward and reverse bias conditions. It highlights that a diode exhibits very high resistance in reverse bias, typically due to the minimal reverse saturation current (approximately 2e-15A for silicon diodes), while forward bias shows lower resistance around 7 ohms. The relationship between voltage and current in a diode is defined by the equation i = i0exp(V/VT), where VT is approximately 26 mV at room temperature. The breakdown voltage for common diodes like the 1N4148 is around 100V, indicating the conditions under which a diode may conduct significantly more current than the reverse saturation current.

PREREQUISITES
  • Understanding of diode characteristics and behavior
  • Familiarity with ohmmeters and their measurement principles
  • Knowledge of semiconductor physics, particularly p-n junctions
  • Basic grasp of electrical concepts such as voltage, current, and resistance
NEXT STEPS
  • Study the diode equation and its implications on current flow
  • Learn about the breakdown characteristics of various diode types
  • Explore the concept of dynamic resistance in diodes
  • Investigate the differences between silicon and germanium diodes
USEFUL FOR

Electronics students, hobbyists, and engineers interested in understanding diode behavior and testing methods using ohmmeters.

JeeebeZ
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Homework Statement



Midterm 1-Q1.jpg


2. The attempt at a solution

So, I know that you can test a Diode with a ohmmeter.

Based off of the R you get Very large reversed biased and fairly low forward biased. But I don't know why it would show these values.

The Large one, revered biased. Kinda makes sense to me since it would have to have a large current to breakdown the diode. potentially...? I'm not quite sure really.

Since Rd is generally about 7ish Ohms, I assume both have to do with the internal current required to drive the diode.

any ideas would be helpful, THX
 
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Hi JeeebeZ. can you estimate the current (roughly) that the circuit will send through the diode? (To do this, you need to estimate the voltage, E.)
 
For the forward direction your ohmmeter will measure V/i where i is the current it sends thru your diode and V the voltage across it. The relationship for your diode is (p-n junction assumed) i = i0exp(V/VT) where i0 = reverse saturation current and VT ~ 26 mV at room temperature. V will be around 0.7V for a Silicon and 0.3V for a Germanium diode.

From this formula you can see that the current for any negative V (reverse voltage) is ~ i0 which is maybe 2e-15A or 2e-12 mA. This is called the leakage current since for an ideal diode the reverse-voltage current = 0.

However, when you hook up the reverse connection so that V is negative, depending on your battery voltage used for the high - resistance settings, the diode MIGHT "break down" and conduct a lot more than i0/SUB]. This is unlikely; for most diodes like the popular 1N4148 the breakdown voltage is about 100V.

Referring to the question, what is di/dV which is 1/(dynamic resistance), vs. i/V which is 1/what the ohmmeter measures?
 
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