Producing VO2 Thin Films Using Reactive Ion Sputtering: A Troubleshooting Guide

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Discussion Overview

The discussion revolves around the challenges of producing VO2 thin films using reactive ion sputtering, focusing on issues related to the characterization of the deposited films, particularly through X-ray diffraction (XRD) and ellipsometry. Participants explore the nature of the films, their thickness, and the reasons for the lack of observable peaks in XRD scans.

Discussion Character

  • Exploratory
  • Technical explanation
  • Debate/contested
  • Experimental/applied

Main Points Raised

  • One participant notes that XRD scans show only substrate peaks, suggesting that the deposited film may not be VO2, despite visual changes on the substrates.
  • Concerns are raised about the amorphous nature of the film, questioning whether it could be detected by XRD, with suggestions to use Raman spectroscopy for better characterization.
  • Another participant discusses the implications of an amorphous film, questioning whether it would produce multiple peaks in XRD due to different crystal orientations.
  • Technical explanations are provided regarding the relationship between crystal orientation and XRD peak visibility, emphasizing the need for constructive interference in crystalline materials.
  • Suggestions are made to adjust the incident angle during XRD to improve detection of thin films.
  • A participant expresses uncertainty about their understanding of the concepts, indicating a learning process in materials science.

Areas of Agreement / Disagreement

Participants express varying views on the nature of the deposited films and the reasons for the lack of observable peaks in XRD. There is no consensus on the exact cause of the issues faced in the deposition process or the characterization methods to be employed.

Contextual Notes

Participants mention the dependence on specific experimental conditions and the limitations of XRD in detecting amorphous materials. The discussion reflects uncertainty regarding the interpretation of results and the appropriate techniques for further analysis.

HappMatt
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I am trying to produce a thin film of VO2 using reactive ion sputtering and am having some issues. The main one is that I have no clue what is being deposited and exactly how think it is.

I have been depositing the film on both Si(100) and glass slides. When I take a XRD scan of both substrates it appears as though the only thing there is the substrate, I.E. a peak at about 70 degree for Si and a amorphous region around 20-30 degrees.

My thoughts on this are as follows. First, there has to be something on the substrates since the glass is obviously tinted and the Si looks a little different also as compared to a bare wafer. If there is something there shouldn't i somehow see it on a scan from 10-70 degrees(which I am not). I have done a very fine scan of the substrae and still no results. The reaction conditions in the paper I'm copying seem to suggest that I should expect a deposition rate around 10nm/min which should have yielded 200nm, the elipsometry only seems to show 20-30nm and a refractive index around 1.5-1.8 when it should be more like 2.2. This seems to suggest That while i have something its not VO2, but shouldn't it show up on XRD and a peak somewhere?

So why would something not show up on the XRD(using simiens D5005)?
I would guess that it is amorphous and sortof gets lost in the glass area but nothing shows on the Si so that doesn't seem to be the case. beside that i would thing that that you would atleast see something.
 
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HappMatt said:
I am trying to produce a thin film of VO2 using reactive ion sputtering and am having some issues. The main one is that I have no clue what is being deposited and exactly how think it is.

I have been depositing the film on both Si(100) and glass slides. When I take a XRD scan of both substrates it appears as though the only thing there is the substrate, I.E. a peak at about 70 degree for Si and a amorphous region around 20-30 degrees.

My thoughts on this are as follows. First, there has to be something on the substrates since the glass is obviously tinted and the Si looks a little different also as compared to a bare wafer. If there is something there shouldn't i somehow see it on a scan from 10-70 degrees(which I am not). I have done a very fine scan of the substrae and still no results. The reaction conditions in the paper I'm copying seem to suggest that I should expect a deposition rate around 10nm/min which should have yielded 200nm, the elipsometry only seems to show 20-30nm and a refractive index around 1.5-1.8 when it should be more like 2.2. This seems to suggest That while i have something its not VO2, but shouldn't it show up on XRD and a peak somewhere?

So why would something not show up on the XRD(using simiens D5005)?
I would guess that it is amorphous and sortof gets lost in the glass area but nothing shows on the Si so that doesn't seem to be the case. beside that i would thing that that you would atleast see something.
If the film is amorphous on Si too, how can we see the film with XRD except the crystalline peaks of Si that you see. I would suggest to check up with Raman spectroscopy which will show you the amorphous film.
 
appsci said:
If the film is amorphous on Si too, how can we see the film with XRD except the crystalline peaks of Si that you see. I would suggest to check up with Raman spectroscopy which will show you the amorphous film.

So if the film is amorphous wouldn't that mean that its is made up of a bunch of different crystals oriennted differently? If so would'nt the XRD instead of picking up a single peak for say a (100) or a (110) it would pick up multiple peaks such as (110), (010),(020) and so on. Or is it that the peaks from those are so small that they are not seen. I appologize I am not a matsci guy although I am slowly becoming one.
 
HappMatt said:
So if the film is amorphous wouldn't that mean that its is made up of a bunch of different crystals oriennted differently? If so would'nt the XRD instead of picking up a single peak for say a (100) or a (110) it would pick up multiple peaks such as (110), (010),(020) and so on. Or is it that the peaks from those are so small that they are not seen. I appologize I am not a matsci guy although I am slowly becoming one.

In amorphous film, the crystals are oriented randomly whereas in crystalline material, its highly periodic which is required for constructive interference to take place. You might have known of superposition of waves. When two waves are in phase, we get the resultant wave as the algebraic sum of amplitude of waves at each point. When they are in phase completely, the resultant wave will have bigger amplitude adding up of two waves. When the phase difference increases, the amplitude decreases and when its 180 deg out of phase, the amplitude will be very very small and we will have desctructive interference.

The peaks we get in XRD is due to superposition of scattered waves from the crystals. Unless they are arranged in some order, we can't see constructive interference as the scattered waves won't be in phase and so no peaks. May be very very small peaks but that would be just like noise.

Try to reduce the incident angle (I hope that's how we say, may be I am wrong, we fix it 2 deg, 5 deg and so on). Higher the angle, higher the depth of scanning. May be try lower angle as your film is very thin so it scans the surface.
 
appsci said:
In amorphous film, the crystals are oriented randomly whereas in crystalline material, its highly periodic which is required for constructive interference to take place. You might have known of superposition of waves. When two waves are in phase, we get the resultant wave as the algebraic sum of amplitude of waves at each point. When they are in phase completely, the resultant wave will have bigger amplitude adding up of two waves. When the phase difference increases, the amplitude decreases and when its 180 deg out of phase, the amplitude will be very very small and we will have desctructive interference.

The peaks we get in XRD is due to superposition of scattered waves from the crystals. Unless they are arranged in some order, we can't see constructive interference as the scattered waves won't be in phase and so no peaks. May be very very small peaks but that would be just like noise.

Try to reduce the incident angle (I hope that's how we say, may be I am wrong, we fix it 2 deg, 5 deg and so on). Higher the angle, higher the depth of scanning. May be try lower angle as your film is very thin so it scans the surface.

thanks, that is sort of what i thought may be happening but being so new to this was unsure. I'm going to be training in on a RBS machine next week which will help me figure out where to go with this deposition process.
 

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