Silicon Dioxide (SiO2) FTIR peaks

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SUMMARY

The discussion focuses on the FTIR peaks of Silicon Dioxide (SiO2), specifically highlighting the Si-O-Si vibration observed in the ATR results. According to the referenced paper by M. Hirose et al., the significant wavenumber for SiO2 FTIR peaks is approximately 1220 cm-1. This information is derived from the analysis presented in "Ultra-Thin Gate Oxide Growth on Hydrogen-Terminated Silicon Surfaces," published in Microelectronic Engineering.

PREREQUISITES
  • Understanding of FTIR spectroscopy principles
  • Familiarity with ATR (Attenuated Total Reflectance) techniques
  • Knowledge of Silicon Dioxide (SiO2) properties
  • Basic grasp of wavenumber measurement in spectroscopy
NEXT STEPS
  • Research the specific FTIR peaks of other silicon compounds
  • Explore advanced ATR techniques for material analysis
  • Study the implications of SiO2 properties in microelectronics
  • Review the paper "Ultra-Thin Gate Oxide Growth on Hydrogen-Terminated Silicon Surfaces" for detailed methodologies
USEFUL FOR

Researchers in materials science, chemists specializing in spectroscopy, and engineers working in microelectronics will benefit from this discussion.

physiks2011
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Hi,
i am looking for the SiO2 FTIR peaks.

Thanks
 
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Hi,
I think you can refer this paper by M. Hirose et al...In this paper, there was an analysis of Si-O-Si vibration from ATR result. I think the number of wavenumbers of FTIR and ATR is similar around 1220cm-1.

Microelectronic Engineering 22 (1993) 3-10
Elsevier
Ultra-Thin Gate Oxide Growth on Hydrogen-Terminated
Silicon Surfaces
 

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