The Possibility of Induced Quantum Mechanical Tunneling?

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Discussion Overview

The discussion centers around the possibility of inducing quantum mechanical tunneling and whether it is feasible to affect the probability of this event without changing the object's mass or the distance to its objective, specifically the barrier thickness.

Discussion Character

  • Exploratory, Technical explanation, Debate/contested

Main Points Raised

  • One participant questions the possibility of inducing quantum mechanical tunneling without altering mass or distance, seeking clarification on the factors involved.
  • Another participant suggests that changing the barrier thickness and energy can influence tunneling probability, referencing practical applications in flash memory technology.
  • A later reply reiterates that altering the barrier thickness and energy can affect tunneling probability, emphasizing the role of initial conditions and potential shapes in the Hamiltonian.
  • Participants discuss various factors that can influence tunneling probabilities beyond mass, including potential barrier characteristics.

Areas of Agreement / Disagreement

Participants generally agree that it is possible to affect tunneling probability through various means, but there is no consensus on the full range of factors or methods available for inducing tunneling.

Contextual Notes

Some assumptions regarding the definitions of terms like "induced tunneling" and the specific conditions under which tunneling probabilities can be altered remain unresolved.

Pau
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Hi everyone, I apologize if the answer to this question is more simple than I am able to realize, but I've searched the internet and haven't found much on the possibility of inducing quantum mechanical tunneling. Is it possible to affect the probability of this event without altering the object's mass or the distance to its objective? Thanks for any input.
 
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Yes change the barrier thickness and or energy.

You have already done this thousands of times whenever you save something on flash memory. It is induced tunnel although that term is not used.

Note not all memory devices work like this.
 
houlahound said:
Yes change the barrier thickness and or energy.

You have already done this thousands of times whenever you save something on flash memory. It is induced tunnel although that term is not used.

Note not all memory devices work like this.
Sorry, by distance to objective I believe i meant barrier thickness as well. Is there any other factor?
 
Pau said:
Is it possible to affect the probability of this event without altering the object's mass or the distance to its objective?
Yes.

You calculate the tunnelling probability from the distance, the initial conditions, and the potential that appears in the Hamiltonian, and many things other than the object's mass enters into the Hamiltonian. Change the initial conditions, height and/or shape of the potential barrier and you will get different tunnelling probabilities.

(I have changed the thread level from I to B)
 
Awesome, thanks!
 

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