Sorry, by distance to objective I believe i meant barrier thickness as well. Is there any other factor?houlahound said:Yes change the barrier thickness and or energy.
You have already done this thousands of times whenever you save something on flash memory. It is induced tunnel although that term is not used.
Note not all memory devices work like this.
Yes.Pau said:Is it possible to affect the probability of this event without altering the object's mass or the distance to its objective?
Quantum mechanical tunneling is a phenomenon in which a quantum particle has a non-zero probability of passing through a potential barrier, even though it does not have enough energy to overcome it. This is possible due to the probabilistic nature of quantum mechanics.
Yes, quantum mechanical tunneling can be induced by manipulating the potential barrier that the particle is trying to pass through. This can be done by applying an external force or changing the temperature of the system, among other methods.
Induced quantum mechanical tunneling has potential applications in fields such as quantum computing, sensing, and energy harvesting. It can also be used to study and understand various quantum phenomena in materials and particles.
Spontaneous tunneling occurs when a particle passes through a potential barrier without any external influence. In contrast, induced tunneling involves manipulating the barrier to make the particle tunnel through it. Induced tunneling can also have a higher success rate compared to spontaneous tunneling.
One of the main challenges in inducing quantum mechanical tunneling is the precise control and manipulation of the potential barrier. This requires advanced technology and techniques, as well as a deep understanding of the quantum properties of the system. Additionally, the success rate of induced tunneling can be affected by factors such as temperature and external disturbances.