The Possibility of Induced Quantum Mechanical Tunneling?

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SUMMARY

The discussion centers on the possibility of inducing quantum mechanical tunneling without altering an object's mass or the distance to its objective. Participants confirm that changing the barrier thickness and energy can influence tunneling probability. The concept of induced tunneling is exemplified through flash memory technology, where tunneling occurs during data saving. Additionally, factors such as initial conditions and the potential in the Hamiltonian are critical in calculating tunneling probabilities.

PREREQUISITES
  • Understanding of quantum mechanics principles, specifically quantum tunneling.
  • Familiarity with Hamiltonian mechanics and potential energy concepts.
  • Knowledge of flash memory technology and its operational principles.
  • Basic grasp of probability theory as it applies to quantum events.
NEXT STEPS
  • Research the role of barrier thickness in quantum tunneling.
  • Explore the Hamiltonian formulation in quantum mechanics.
  • Investigate the mechanics of flash memory and induced tunneling.
  • Study the effects of initial conditions on quantum tunneling probabilities.
USEFUL FOR

Physicists, quantum mechanics students, electrical engineers, and anyone interested in the practical applications of quantum tunneling in technology.

Pau
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Hi everyone, I apologize if the answer to this question is more simple than I am able to realize, but I've searched the internet and haven't found much on the possibility of inducing quantum mechanical tunneling. Is it possible to affect the probability of this event without altering the object's mass or the distance to its objective? Thanks for any input.
 
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Yes change the barrier thickness and or energy.

You have already done this thousands of times whenever you save something on flash memory. It is induced tunnel although that term is not used.

Note not all memory devices work like this.
 
houlahound said:
Yes change the barrier thickness and or energy.

You have already done this thousands of times whenever you save something on flash memory. It is induced tunnel although that term is not used.

Note not all memory devices work like this.
Sorry, by distance to objective I believe i meant barrier thickness as well. Is there any other factor?
 
Pau said:
Is it possible to affect the probability of this event without altering the object's mass or the distance to its objective?
Yes.

You calculate the tunnelling probability from the distance, the initial conditions, and the potential that appears in the Hamiltonian, and many things other than the object's mass enters into the Hamiltonian. Change the initial conditions, height and/or shape of the potential barrier and you will get different tunnelling probabilities.

(I have changed the thread level from I to B)
 
Awesome, thanks!
 

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