Thermal conductivity and Debye temperature

Click For Summary
SUMMARY

The discussion focuses on calculating the thermal conductivity of pure argon and silicon cubes at various temperatures using the Debye model. The Debye temperatures are given as 92 K for argon and 345 K for silicon. The thermal conductivity formula involves parameters such as speed of sound, mean free path, molar heat capacity, and molar volume. Key assumptions include the purity of materials and constancy of molar volume and mean free path.

PREREQUISITES
  • Understanding of thermal conductivity and its mathematical representation
  • Familiarity with Debye temperature and its significance in solid-state physics
  • Knowledge of molar heat capacity and its calculation
  • Basic concepts of mean free path in the context of thermal transport
NEXT STEPS
  • Explore the derivation and applications of the Debye model in thermal conductivity
  • Learn about the relationship between temperature and molar heat capacity in solids
  • Investigate methods to calculate mean free path for different materials
  • Study the effects of impurities and defects on thermal conductivity in solids
USEFUL FOR

Students and researchers in materials science, physicists studying thermal properties of solids, and engineers focused on thermal management in semiconductor applications.

Flucky
Messages
93
Reaction score
1
Hi all

Homework Statement



The Debye temperature of argon is 92 K and that of silicon is 345 K. Rank the following in order of thermal conductivity (largest value first):
(i) A 1 cm3 cube of silicon at 6 K
(ii) A 512 mm3 cube of silicon at 2 K
(iii) A 1 mm3 cube of argon at 4 K
(iv) A 512 mm3 cube of argon at 2 K

You may assume that the argon and silicon are pure (i.e. there are no defects or impurities).What additional assumptions have you made?


Homework Equations



[1] κ = \frac{1}{3}vl\frac{C_{v}}{V_{m}}

where v is speed of sound [3], l is mean free path, C_{v} is molar heat capacity and V_{m} is molar volume.

[2] C_{v} = \frac{12π^{4}}{\hbar}Nk_{b}(\frac{T}{θ_{D}})^{3}

where N is number of atoms, T is temperature and θ_{D} is Debye temperature.

[3] v = \frac{θ_{D}k_{b}}{\hbar}\sqrt[3]{\frac{V}{6π^{2}N}}


The Attempt at a Solution



The thing that is throwing me is N, number of atoms. There is no density or mass given in the question so I'm not sure what to do. One idea was to assume that N is proportional to V but I don't know how to incorporate that into the equations. Maybe there is something I can do with V/N together instead of treating them separately.

Also the molar volume V_{m} surely I need a mass or density in order to find out how many moles there are for each part of the question?

I'm also not sure what to do with the mean free path, l.

Any pointers in the right direction would be really appreciated.
 
Physics news on Phys.org
Additional assumptions: 1. The argon and silicon are pure and free from defects or impurities. 2. The molar volume of the argon and silicon is constant. 3. The mean free path of the argon and silicon is constant.
 

Similar threads

  • · Replies 2 ·
Replies
2
Views
5K
  • · Replies 1 ·
Replies
1
Views
2K
  • · Replies 1 ·
Replies
1
Views
2K
Replies
1
Views
3K
Replies
3
Views
2K
Replies
4
Views
2K
  • · Replies 4 ·
Replies
4
Views
2K
  • · Replies 7 ·
Replies
7
Views
2K
Replies
49
Views
3K
  • · Replies 12 ·
Replies
12
Views
2K