Thermal conductivity of SiC and the mechanisms

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SUMMARY

The discussion centers on the thermal conductivity of Silicon Carbide (SiC) at high temperatures, specifically around 1000 °C. It highlights the significance of phonons over photons in heat transfer, referencing the Rosseland heat diffusion equation. The calculated radiative thermal conductivity (Krad) using the equation yields a value below 1 W/(mK), while literature indicates that SiC exhibits thermal conductivity near 20 W/(mK) at high temperatures. This discrepancy suggests that additional mechanisms, possibly involving phonons, contribute to the observed thermal conductivity.

PREREQUISITES
  • Understanding of thermal conductivity principles
  • Familiarity with the Rosseland heat diffusion equation
  • Knowledge of phonon and photon interactions in materials
  • Basic concepts of thermal properties of materials at high temperatures
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Material scientists, thermal engineers, and researchers focusing on high-temperature applications of Silicon Carbide and related materials.

Carlos de Meo
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Hi Guys
I was studying the thermal properties of SiC at high temperatures and now i have a few questions
Usually, at high temperatures, the photons effect are much more intense than phonons at high temperature, correct?
According to Rosseland heat diffusion equation
Krad = 16σT3 /3β, β= 4πK/λ, σ is the steffan-Boltzmann constant,β the absorption coefficient and k the extinction coefficient
From the literature, i found the following numbers for the SiC: k= 10-2 for λ= 2 μm
Using these values in the Rosseland equation, Krad is smaller than 1 W/(mK)-1 but from the literature the measured value for SiC thermal conductivity at high temperatures (around 1000 °C) is around 20 W/(mK)-1. Is it due to pure phonons effect or am i missing another effect ?
 
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