Thermal excitation of electrons in semiconductors

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Discussion Overview

The discussion centers on the mechanisms of thermal excitation of electrons in semiconductors, particularly focusing on the role of temperature and lattice interactions in electron transitions from the valence to conduction band. Participants explore concepts related to thermal equilibrium, generation and recombination rates, and the implications of these processes in semiconductor physics.

Discussion Character

  • Exploratory
  • Technical explanation
  • Debate/contested

Main Points Raised

  • One participant questions whether valence electrons gain excitation energy from the lattice by absorbing phonons, suggesting that they could be excited at any temperature.
  • Another participant acknowledges the temperature dependence of the probability of electron excitation events, indicating that while excitation can occur, it is influenced by temperature.
  • Concerns are raised about the necessity of equal generation and recombination rates for thermal equilibrium, with one participant arguing that equilibrium could exist with only generation processes.
  • A participant emphasizes that equilibrium implies a constant number of excited electrons and holes, suggesting a misunderstanding of the types of equilibrium involved.
  • Another participant points out that "equilibrium of X" implies that X does not change over time, indicating a focus on the stability of the system.

Areas of Agreement / Disagreement

Participants express differing views on the necessity of recombination processes for thermal equilibrium and the implications of temperature on excitation mechanisms. The discussion remains unresolved regarding the definitions and conditions of equilibrium in this context.

Contextual Notes

Participants appear to have different interpretations of equilibrium, including thermal and chemical aspects, which may affect their arguments. The discussion also highlights the dependence of excitation probabilities on temperature, which is not fully explored.

hokhani
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Which mechanism in semiconductors is responsible for electron excitation from valence to conduction band in thermal equilibrium at temperature T? Do valence electrons take their excitation energy from the lattice by absorbing phonon? If so, they can be excited at each arbitrary temperature no matter how much the temperature is down!

Another relevant problem:
I don't know why generation and recombination rates must be the same in equilibrium? electrons can be excited without affecting the thermal equilibrium this way:they receive heat from lattice but since they are not localized, they can be participant in thermal equilibrium (in other words the equilibrium is so existing) and we don't necessarily need to have any recombination processes for the equilibrium condition. In brief, having the recombination process is not the necessary condition for thermal equilibrium,and I think the equilibrium can exist by having only the generation process.

could anyone help me please?
 
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hokhani said:
Which mechanism in semiconductors is responsible for electron excitation from valence to conduction band in thermal equilibrium at temperature T? Do valence electrons take their excitation energy from the lattice by absorbing phonon? If so, they can be excited at each arbitrary temperature no matter how much the temperature is down!
Right, but the probability (or frequency of those events, if you like) is extremely temperature-dependent.

I don't know why generation and recombination rates must be the same in equilibrium?
That's the definition of equilibrium. A constant number of excited electrons and holes.
 
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mfb said:
That's the definition of equilibrium. A constant number of excited electrons and holes.

Perhaps I have disregarded the chemical equilibrium (equality of chemical potential) and regarded just the temperature equilibrium! Haven't I?
 
I don't know what you did, but "equilibrium of X" always means X does not change in time.
 

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