Trouble replicating a calculation in Silicon Nanoelectronics

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Discussion Overview

The discussion revolves around the challenges of replicating a calculation related to the transmission probability of a rectangular-shaped potential barrier as described in the textbook "Silicon Nanoelectronics." Participants explore the implications of various parameters, including effective mass and barrier height, in the context of this calculation.

Discussion Character

  • Technical explanation
  • Debate/contested
  • Mathematical reasoning

Main Points Raised

  • One participant expresses difficulty in replicating the estimation of barrier widths corresponding to specific transmission probabilities, questioning the effective mass value used.
  • Another participant suggests that the transmission probabilities may have been swapped, indicating that a wider barrier should yield a lower probability.
  • A participant provides their own calculations, arriving at different barrier widths for the same probabilities, and invites the original poster to share their calculations for further analysis.
  • One participant points out a potential error in the barrier height value used by the original poster, clarifying that 100 mV (millivolts) was intended rather than 100 MV (megavolts).
  • After the clarification about the barrier height, another participant acknowledges that this resolves the confusion regarding the calculations.

Areas of Agreement / Disagreement

Participants do not reach a consensus on the correct values or calculations, as there are competing views regarding the interpretation of the transmission probabilities and the parameters used in the calculations.

Contextual Notes

There is uncertainty regarding the effective mass of silicon and the correct interpretation of the barrier height, which affects the calculations. The discussion reflects various assumptions and interpretations that have not been resolved.

Who May Find This Useful

This discussion may be useful for students and researchers working on quantum mechanics, semiconductor physics, or those specifically interested in calculations related to transmission probabilities in nanoelectronics.

Achmed
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Trouble replicating a calculation in "Silicon Nanoelectronics"

I'm reading the textbook "Silicon Nanoelectronics" and I've encountered an equation for the transmission probability, which you can see among the attachments.

In this equation, T is the transmission probability for a rectangular-shaped potential barrier with width d and height ϕ, where m* is the effective mass of silicon and q the elementary charge.

They go on to say that "From Equation (3.1), the barrier width
giving transmission probabilities of 1 × 10^-3 and 1 × 10^-6 at a barrier height of 100
mV can be estimated to be 10 and 5 nm, respectively."

I really, really want to replicate this estimation/calculation but I can't seem to do in. When I plug in the given numbers (ϕ = 100 mV, d = 5 or 10 nm, q = elementary charge, ħ = reduced Planck constant, and m* = effective mass silicon), I can't seem to get even remotely close to the listed probabilities. Perhaps the problem is the effective mass of silicon? I am not certain what value I should take, but I went with 0,2 times the mass of an electron (see: http://ecee.colorado.edu/~bart/book/effmass.htm)

Can anyone please show me how the writer approximately got 10nm and 5nm using the equation and the given probabilities? I know it's not a precise calculation, nor a precise equation, but I'd still like to see how he got this estimation.
 

Attachments

  • Formula Transmission Barrier.jpg
    Formula Transmission Barrier.jpg
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I think you have the transmission probabilities swapped. The wider barrier will give a lower probability. Using your numbers I got 9.6 nm and 4.8nm for transmission probabilities of 1E-6 and 1E-3, respectively. Why don't you post your calculations and we'll see if we can find what is wrong.
 
phyzguy said:
I think you have the transmission probabilities swapped. The wider barrier will give a lower probability. Using your numbers I got 9.6 nm and 4.8nm for transmission probabilities of 1E-6 and 1E-3, respectively. Why don't you post your calculations and we'll see if we can find what is wrong.
That's what I tought, too: It must be a sloppy mistake by the author (it is written this way by the author).

I don't know what I'm doing wrong, but I can't really show you anything insightful. I just plugged in the numbers into the formula, and my calculator keeps giving me 0 as the answer.
 
I can't give you any more help unless you show an attempt. Show what numbers you are plugging in and some intermediate steps in the calculation.
 
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phyzguy said:
I can't give you any more help unless you show an attempt. Show what numbers you are plugging in and some intermediate steps in the calculation.
q = 1.60217657 × 10^-19
ϕ = 100 x 10^6

(qϕ)^1/2 ≈ 4 x 10^-6

2m* = 0.4 * 9.10938291×10^ −31 ≈ 3.64 x 10^-31
ħ^2 = (1.05457173 × 10^-34)^2 ≈ 1,1 x 10^-68

(2m*/ħ^2 )^1/2 ≈ 5.75 x 10^18

-2 * 5.75 x 10^18 * 4 x 10^-6 ≈ -4.6 x 10^(13)

10^-3 = exp[-4.6 x 10^(13)d]

ln(10^-3) = -4.6 x 10^(13)d

d ≈ 1.5 x 10^-13 , which is obviously extremely incorrect.
 
Last edited:
Achmed said:
ϕ = 100 x 10^6

That is 100 megavolts. That would be a huge barrier. You were talking about 100 millivolts before.
 
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Cthugha said:
That is 100 megavolts. That would be a huge barrier. You were talking about 100 millivolts before.

Wow... that solves it.
 

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