- #1

- 43

- 0

## Homework Statement

Consider a pn junction in Si at 300K (other parameters given), with doping N

_{A}= 10

^{21}/m

^{3}and N

_{D}= 10

^{23}/m

^{3}. Assume all impurities are ionized. On this basis find the Fermi level on each side. From this find the band bending V

_{B}and make a sketch of the pn junction.

## Homework Equations

[itex]N_e = N_C e^{\frac{-(E_G - E_F)}{k_B T}} [/itex]

## The Attempt at a Solution

The Fermi energy calculation was fairly straightforward to solve for, since I just used the formula above for both sides and solved for E

_{F}. My question is about band bending. What is it and how do I calculate it? I looked through the relevant chapter in my text-book, but I couldn't find any reference to it. Can someone show me how it relates to the Fermi energy that I have already calculated?