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I Double heterostructure junction in forward and zero bias

  1. May 26, 2016 #1
    When dealing with a pn homojunction, it is easy to see the features it has at equilibrium, and also the features it has with forward/reverse bias. Plots show the constant Fermi level at equilibrium and the different Fermi levels for a forward bias; moreover, examples show how much the bands bending is reduced from an external voltage.
    Is it possible to find similar informations for a semiconductor double heterostructure?
    In particular, I would like to know, in forward bias:
    - how are the Fermi levels modified through all the three regions;
    - how much and where is the bands bending modified in the regions;
    - what kind of doping it is more convenient for the central region.
    Is there a book or a link which can show these features?
    Thank you anyway!

  2. jcsd
  3. May 31, 2016 #2
    Thanks for the post! This is an automated courtesy bump. Sorry you aren't generating responses at the moment. Do you have any further information, come to any new conclusions or is it possible to reword the post?
  4. Jun 1, 2016 #3
    I know that my questions were very specific. More simply, do you know some books that talk about heterostructures?
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