SUMMARY
The term "high breakthrough field" refers to the ability of MOSFET transistors to withstand high electric field gradients without dielectric breakdown, particularly in the context of thin film displays. The design considerations for these transistors are crucial, as they must endure maximum display voltages across thin dielectrics. The referenced article discusses these parameters in detail, emphasizing the importance of high breakdown voltage in ensuring reliable performance in display technologies.
PREREQUISITES
- MOSFET transistor design principles
- Understanding of dielectric materials and their properties
- Knowledge of thin film technology
- Familiarity with electric field concepts in semiconductor applications
NEXT STEPS
- Research the properties of dielectric materials used in thin film displays
- Explore advanced MOSFET design techniques for high voltage applications
- Learn about electric field gradient calculations in semiconductor devices
- Investigate the latest advancements in thin film technology for display applications
USEFUL FOR
This discussion is beneficial for electrical engineers, semiconductor researchers, and professionals involved in display technology development, particularly those focused on enhancing the performance of MOSFET transistors in high voltage environments.