What is high breakthrough field?

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The term "high breakthrough field" refers to the ability of a dielectric material in MOSFET transistors to endure high electric field gradients without failure. This is crucial for thin film displays, where the transistor must maintain a breakdown voltage that can handle the maximum display voltage across a thin dielectric layer. The design considerations ensure that the dielectric does not break down when the transistor is turned off. The discussion highlights the importance of this characteristic in the performance and reliability of thin film display technologies. Understanding this concept is essential for advancements in transistor design and application.
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I have read in the following article the expression "high breakthrough field": https://link.springer.com/article/10.1557/PROC-871-I9.6

I tried to find out in the internet what is the definition of that and what it refers to in the transistors but I couldn't find anything!

Thank you in advance!
 
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Engineering news on Phys.org
The paper is behind a paywall.
The paper reports on the design of MOSFET transistors for use in thin film displays.

When turned off, the breakdown voltage of the transistor must withstand the maximum display voltage across a thin dielectric. The dielectric must withstand a high electric field gradient without breaking down.
 

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