The growth temperature for GaAs(0 0 1)-c(4x4) using Molecular Beam Epitaxy (MBE) is typically below the melting point of GaAs, which is 1238°C. The discussion emphasizes that this melting point serves as a lower limit for growth temperatures. Specific optimal temperatures for MBE processes are often determined through empirical studies and can vary based on desired film quality and characteristics. Accurate temperature control is crucial for achieving the desired crystal structure and properties. Understanding these parameters is essential for successful MBE growth of GaAs films.