SUMMARY
Photodiodes exhibit nonlinear behavior, making the concept of resistance inadequate for their characterization. In reverse-bias operation, photodiodes have effectively infinite resistance in darkness, with negligible current flow. When exposed to light, charge carriers are liberated, resulting in increased current and decreased effective resistance. This behavior is consistent across all photodiodes, where higher light intensity correlates with lower resistance due to increased electron-hole pair generation.
PREREQUISITES
- Understanding of semiconductor physics
- Knowledge of p-n junction behavior
- Familiarity with reverse-bias operation in diodes
- Basic concepts of charge carriers in semiconductors
NEXT STEPS
- Research the characteristics of photodiodes under varying light intensities
- Learn about the reverse saturation current in photodiodes
- Study the generation of electron-hole pairs in semiconductors
- Explore graphical representations of photodiode I-V characteristics
USEFUL FOR
Electronics engineers, physicists, and anyone involved in the design or application of photodiodes in optical systems.