Worst-case power consumed by a circuit with MOSFETs

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SUMMARY

The worst-case power consumption in a circuit with MOSFETs occurs when all three MOSFETs are in the ON state. The analysis considers eight combinations of ON/OFF states for the MOSFETs, revealing that the highest power is drawn when all are activated. The calculations confirm that the ON resistance of the MOSFET is 1 kilo-ohm, consistent with the problem statement from MIT's OCW 6.002. The power consumption is derived from the formula P = i·V_S + i_2·V_S, where i and i_2 represent the currents through the left and right sides of the circuit, respectively.

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  • Understanding of MOSFET operation and characteristics
  • Basic circuit analysis techniques
  • Knowledge of Ohm's Law and power calculations
  • Familiarity with MIT OCW 6.002 course materials
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  • Study circuit analysis techniques for multiple components
  • Explore power consumption calculations in electronic circuits
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Electrical engineers, circuit designers, and students studying semiconductor devices and power consumption in electronic circuits.

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Homework Statement
Consider the circuit depicted below. Use the Switch-Resistor model for the MOSFETs.

Assume ##R_6=R_7=10\mathrm{k\Omega}##, the threshold voltage for the MOSFETs is ##\mathrm{2V}##, and the resistance of the MOSFET in its ON state is ##\mathrm{1k\Omega}##.

Compute the worst-case power consumed by this circuit.
Relevant Equations
##P=iV##
Here is the circuit.
1706844518821.png


Note that no current flows between the left and right sides of the circuit: their only relationship happens through the MOSFET that is parallel to B.

There are eight cases to consider: all the combinations of ON/OFF for the three MOSFETs.

Here is a summary of the eight cases according to my calculations

1706844476952.png


It seems that the highest power consumption occurs when all MOSFETs are on.

Here is more in depth explanation of how the table above was created.

It seems that whether MOSFET C is on or off, the voltage at the node right above it (beneath resistor R7) is higher than ##V_T=\mathrm{2V}##.

Thus, the MOSFET in parallel with B is always on.

Let's consider just the left side of the circuit for now.

If ##A## is off, then no current flows so ##i=0##.

Suppose A is on.

Then we have two cases:
B on, B off.

If B is on, then the left side of the circuit becomes

1706843242280.png


##i=\frac{5}{11.5\cdot 10^3}\text{A}## and ##v_{OUT}=\frac{10}{11.5}\cdot 5\text{V}##.

Power consumed by this subcircuit is ##i\cdot V_S=5\cdot\frac{5}{11.5\cdot 10^3}\mathrm{\frac{J}{S}}##.

If, on the other hand, B is off then the only difference is that the resistance that is ##1/2\mathrm{k\Omega}## above becomes ##1\mathrm{k\Omega}##.

Thus, ##i=\frac{5}{12\cdot 10^3}\mathrm{A}## and ##v_{OUT}=\frac{10}{12}\cdot 5=\frac{25}{6}\text{V}##.

Now consider the right side of the circuit.

Suppose ##C## is on. Then the current on the right side (call it ##i_2##) will be ##i_2=\frac{5\text{V}}{11\cdot 10^3}\text{A}##.

If ##C## is off, then no current flows on the right side.

Finally, to obtain power consumption I simply computed ##P=i\cdot V_S+i_2\cdot V_S## for all eight cases.

Is this the correct calculation?
 
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The ON resistance of the MOSFET is kilo-ohms??? Seems odd.
 
Here is the problem statement in full. From this problem set of MIT OCW's 6.002

1708291477245.png


The cited exercise from Agarwal's books is

1708291533867.png


and here is Figure 6.59(c)

1708291600986.png

Thus, the ON resistance is indeed 1 kilo-ohm.
 

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