Recent content by orangeincup

Homework Statement Design serial transmitter circuit take 8-bit word in parallel as input, when an input control signal (SEND) goes high, and serially outputs the word (i.e., one bit during each clock cycle) to a single transmission line. Transmission of a word begins with the least...

Oh that makes more sense. Is that something I'm suppose to know for all state machines or is it something specific to this question?

I was going to use the formatting but I don't think there's any equations involved with this(at least that I've used in digital logic), and the question itself is a picture I understand what a state transition table is and how it works, what I don't know is how they created the table from just...

So I was reading my book and I came across a table, I don't understand how they converted the problem into a table. They're designing a sequential logic machine and it looks like they made a K map of something, but I don't know what they used. Can anyone explain how the book did this...

Yeah I solved it, thanks

Am I suppose to treat it as two different Laplace transforms combined? Not sure how that would work but I know the two individual formulas below 2/((s+4)^2) 1/s^n = t^n-1/(n-1)! = x*2 and 1/(s-a) = e^-4x

L(2x*e^(-4x)) = 2x* 1/(s-4)

2*e^(-4*x) is what I get, I don't know where the other x came from. Well I mean I know it's because it's squared, I just don't see how my laplace transform formula is giving me that

Homework Statement So I know 1/(s-a)=e^(a1), but why is say, 2/((s+4)^2) equal to 2xe^-4x? Do I just simply add an X if the numeration is a constant other than 1?

Homework Statement A sample of Si, in which 0<=x<=(25*10^-4), electron concentration is n(x)=5*10^16 cm^-3) * exp(-x^3/2*10^-8), temperature is 300k and electron mobility is 1300 cm^2/V*s. The electron current through the Si has both drift and diffusion components and total electron current...

x^2=((1.04*10^19*6*10^18)*(400/300)^3exp(-.66/(400*8.62*10^-5)) =8.50*10^14, does this look more correct? I fixed errors in my last post My calculated ni for 300k is off by a bit though... it's suppose to be 2.4*10^13 but I calculated 2.2*10^13 using the same method above. Did I make a mistake?

Okay thank you

Si replacing GA > Nd=.35*1.5*10^8 = 5.25*10^7 Si replacing As= Na=.65*1.5*10^8 = 9.75*10^7 Electron concentration n0=(Nd-Na)/2 + sqrt((Nd-Na/2)^2+ni^2) (5.25*10^7-9.75*10^7)/2 + sqrt((5.25*10^7-9.75*10^7/2)^2+1.8*10^10^2) = 1.29*10^8 electron concentration Hole concentration p0=(Na-Nd)/2 +...

I found a book that explained it better with pictures, I think I understand it now. Thanks for asking.

Ok I calculated the rest the same way, here's how I did the Nd=10^14majority carrier = (Nd-Na)/2 + sqrt((Nd-Na/2)^2+ni^2) (10^14)/2 + sqrt((10^14/2)^2+1.5*10^10^2)= 1.00*10^14 minority carrier= (-10^14)/2 + sqrt((-10^14/2)^2+1.5*10^10^2) 2.24*10^6 log(10^14) = 32.32 donor concentration...