Semiconductor doping - doping concentration is 0?

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Homework Help Overview

The discussion revolves around semiconductor doping, specifically focusing on a sample of germanium with defined acceptor and donor concentrations. Participants are tasked with calculating intrinsic carrier concentration, majority carrier concentration, and energy levels at a temperature of 400 K.

Discussion Character

  • Exploratory, Conceptual clarification, Mathematical reasoning

Approaches and Questions Raised

  • Participants attempt to apply equations related to effective density of states and intrinsic carrier concentration. There are questions about the validity of using certain equations at different temperatures and whether recalculating values for Nv and Nc is necessary.

Discussion Status

Some participants express confusion regarding the equations used and their applicability at different temperatures. There are suggestions to clarify the origin of numbers used in calculations and to differentiate between old and new values of density of states. Others are revising their calculations based on feedback and questioning their results.

Contextual Notes

Participants are navigating the complexities of semiconductor physics, including the implications of temperature on effective density of states and the assumptions made in their calculations. There is a noted discrepancy in calculated intrinsic carrier concentration values compared to expected results.

orangeincup
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Homework Statement


A sample of germaium has an acceptor concentration of Na=10^17 and a donor concentration of Nd=0. Calculate the intrinsic carrier concentration, majority carrier concentration, and Ef-Efi. Use T=400

Homework Equations


No*Np=ni^2
Nv=Nv*(T/300)^3/2
Nc=Nc*(T/300)^3/2
ni^2=Nv*Nc exp(Ns)

The Attempt at a Solution


1.04*10^19 * (400/300)^3/2 = 1.23*10^19 =Nv
6*10^18 * (400/300)^3/2=7.11*10^18 = Ncni=((((1.04*10^19*6*10^18)^2exp(-.66/(2*400*8.6*10^-6)))^1/2

ni=9.21*10^16

10^17/2+sqrt((10^17/2)^2+(9.21*10^16)^2)=1.55*10^17

Does this look correct? I feel like the ni value is wrong
 
Last edited:
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orangeincup said:
Nv=Nv*(T/300)^3/2
Nc=Nc*(T/300)^3/2
Those equations don't make sense.
 
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mfb said:
Those equations don't make sense.
Isn't the new Nv different at different temperatures? Are you saying it doesn't make sense because I put Nv=Nv, or because I shouldn't use it?

I wasn't sure if I had to re-calculate a new value of Nv and Nc or not, the calculations I did below that used the original values and not the ones I calculated above
 
What is new, what is old?
Your equations could be "solved" to give T=300. If you want to indicate two different things with Nv, then use different labels.
If you use numbers not given in the problem statement, it would help to explain where they come from (I made this comment before).
Also, for long formulas it is useful to write it in terms of variables first, and then plug in numbers. A large collection of numbers is hard to decrypt, and even harder if the origin of those numbers is unclear.
 
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Nvi=Nvf*(T/300)^3/2

Effective density of states(valence, Nv T=300 K )
Nvf is the new calculated density of states(valence, Nv T=400 K )

The Nc is the same, but for the conduction bandEffective density of states
(conduction, Nc T=300 K )

2.8x10^19

source https://www.el-cat.com/silicon-properties.htm
 
x^2=((1.04*10^19*6*10^18)*(400/300)^3exp(-.66/(400*8.62*10^-5))
=8.50*10^14, does this look more correct? I fixed errors in my last post

My calculated ni for 300k is off by a bit though... it's suppose to be 2.4*10^13 but I calculated 2.2*10^13 using the same method above. Did I make a mistake?
 

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