1. The problem statement, all variables and given/known data GaAs has an effective density of states (DOS) = 4 × 1017 cm−3 for the conduction band, = 8 × 1018 cm−3 for the valence band and a band gap of = 1.42 eV. a) A thin slice of GaAs is illuminated by a cw light source, creating a steady state density of 1017 cm−3 of electrons and holes. Calculate the quasi-Fermi level of holes and electrons for the system. 2. Relevant equations ni = (NCNV)1/2 (-EG/2kT); Ei = EG/2 + kT/2 * ln(NV/NC); Efc-Ei = kTln(n/ni); Efv-Ei = -kTln(p/ni); Efc-Ei = kTln(1017/ni); Efv-Ei = -kTln(1017/ni); 3. The attempt at a solution My problem is that this equations is right?