1. Not finding help here? Sign up for a free 30min tutor trial with Chegg Tutors
    Dismiss Notice
Dismiss Notice
Join Physics Forums Today!
The friendliest, high quality science and math community on the planet! Everyone who loves science is here!

Calculating Fermi Level position in doped Silicon

  1. May 5, 2012 #1
    Estimate the Fermi level position EFn for a Si sample at room temperature that
    is doped with 1015 shallow donors cm-3.




    From coursework I've gatherred over the year I understand the equation needed is: EF=EC-kT ln(NC/n)
    n, being equal to the donor concentration
    EC is the conduction band energy.




    my problem with the question is knowing the value of EC. I know the value of the bandgap for silicon but I can't relate it to EC without introducing EV, another variable I don't know. Any help with finding EC or another approach to the question would be great.
     
  2. jcsd
  3. Aug 9, 2012 #2
    If you assume Ec=0 eV... then the Fermi level will be reference to the conduction band edge (Ev would then be -Eg, since Eg = Ec - Ev).
     
Know someone interested in this topic? Share this thread via Reddit, Google+, Twitter, or Facebook




Similar Discussions: Calculating Fermi Level position in doped Silicon
Loading...