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Benjammith

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**Estimate the Fermi level position E**

is doped with 10

_{Fn}for a Si sample at room temperature thatis doped with 10

^{15}shallow donors cm^{-3}.**From coursework I've gatherred over the year I understand the equation needed is: E**

n, being equal to the donor concentration

E

_{F}=E_{C}-kT ln(N_{C}/n)n, being equal to the donor concentration

E

_{C}is the conduction band energy.**my problem with the question is knowing the value of E**

_{C}. I know the value of the bandgap for silicon but I can't relate it to E_{C}without introducing E_{V}, another variable I don't know. Any help with finding E_{C}or another approach to the question would be great.