Estimate the Fermi level position EFn for a Si sample at room temperature that is doped with 1015 shallow donors cm-3. From coursework I've gatherred over the year I understand the equation needed is: EF=EC-kT ln(NC/n) n, being equal to the donor concentration EC is the conduction band energy. my problem with the question is knowing the value of EC. I know the value of the bandgap for silicon but I can't relate it to EC without introducing EV, another variable I don't know. Any help with finding EC or another approach to the question would be great.