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Fermi Energy level with respect to band gap energy

  1. Oct 23, 2011 #1
    1. The problem statement, all variables and given/known data
    Calculate Efi with respect to the center of the bandgap in silicon for t= 200, 400, 600 kelvin.


    2. Relevant equations
    ni = Nc e^-((Ec- Ef)/(kt))

    k = boltzman constant
    t= temperature in kelvin
    Ec = energy level of the conduction band
    ef= fermi energy level
    ni= carrier concentration
    Nc = densitiy of states in conduction band


    3. The attempt at a solution

    Im not sure how to approach this problem, please help.
     
  2. jcsd
  3. Oct 1, 2013 #2
    You should have been given all the other variables to be able to solve this. Do you know the concentration and the density of states?
     
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