Calculate Efi with respect to the center of the bandgap in silicon for t= 200, 400, 600 kelvin.
ni = Nc e^-((Ec- Ef)/(kt))
k = boltzman constant
t= temperature in kelvin
Ec = energy level of the conduction band
ef= fermi energy level
ni= carrier concentration
Nc = densitiy of states in conduction band
The Attempt at a Solution
Im not sure how to approach this problem, please help.