1. The problem statement, all variables and given/known data Calculate Efi with respect to the center of the bandgap in silicon for t= 200, 400, 600 kelvin. 2. Relevant equations ni = Nc e^-((Ec- Ef)/(kt)) k = boltzman constant t= temperature in kelvin Ec = energy level of the conduction band ef= fermi energy level ni= carrier concentration Nc = densitiy of states in conduction band 3. The attempt at a solution Im not sure how to approach this problem, please help.