How do you calculate carrier concentration in a doped semiconductor?

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SUMMARY

The discussion focuses on calculating carrier concentration in a doped silicon (Si) semiconductor, specifically with 1014 boron atoms per cm3 at 300K. The user initially proposed using the formula n = 2[(2πun kT/h2)](3/2), which is incorrect for this context. The correct approach involves using charge neutrality, where n + Nd = p + Na, leading to n = Nd - Na and p = ni2 / n, with Na representing the acceptor concentration.

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I have a homework on Solid state device
the question is :"If a Si sample is doped with 10^14 boron atoms per cm3 then determine the
carrier concentration in the Si sample at 300K."[/b]

I thought that the concentration is calculate by
n = 2[(2pi*un*kT/h^2)]^(3/2)
is this right formula ? How about the Nd = 10^14 ?

thank you.
 
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I thought it wrong.
I have tried and solve it like : Boron is acceptor then Na = 10^14
by the charge neutrality relationship, n + Nd = p + Na
this is doped semiconductor, then n = Nd - Na and p = ni^2 / n
but what is the value of Nd ?
 

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