What is the electron concentration in a p-doped semiconductor?

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SUMMARY

The electron concentration in a p-doped semiconductor can be calculated using the intrinsic carrier concentration and the acceptor concentration. Given an intrinsic carrier concentration of 5.6 x 10^14 m^-3 at 300K and an acceptor concentration (Na) of 3.9 x 10^18 m^-3, the electron concentration can be determined without needing the energy band gap (Eg). The relevant equation simplifies the calculation, allowing for a straightforward approach to finding the electron concentration in p-doped materials.

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A semiconductor material has an intrinsic carrier concentration of 5.6 x 10^14 m^-3 at 300K.
What is the electron concentration when such a semiconductor is p doped with an acceptor concentration Na = 3.9 x 10^18 m-3.

I have no idea how to approach this question without a value for the energy band gap. Could someone point me in the right direction? Thanks.
 
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Why do you need the value of Eg for this question? You only need a simple equation for this question.
 
Defennder said:
Why do you need the value of Eg for this question? You only need a simple equation for this question.

Thanks for the boost in confidence, I've worked it out now anyway.
 

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