Suppose I have an n-doped semiconductor and want to measure the electron concentration in the conduction band as a function of temperature.(adsbygoogle = window.adsbygoogle || []).push({});

How would I go about doing this by measuring the Hall coefficient as a function of temperature, given that I don't know the electron and hole mobilities and thus cannot (unless I am wrong here?) assume that the electrons provide the dominant contribution to the Hall coefficient.

If I could assume electrons were the dominant carriers it would be simple since then the Hall coefficient R_{H}=-1/ne.

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# I Carrier Concentration in a Semiconductor

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