Change in Fermi level with gradient of doping concentration

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Discussion Overview

The discussion revolves around the behavior of the Fermi level in a degenerate n-type semiconductor when there is a gradient in doping concentration. Participants explore how the Fermi energy level and intrinsic Fermi energy levels are influenced by this concentration gradient, touching on theoretical and conceptual aspects.

Discussion Character

  • Exploratory
  • Technical explanation
  • Conceptual clarification

Main Points Raised

  • One participant inquires about the dependence of the Fermi energy level and intrinsic Fermi energy levels on the doping concentration gradient in a degenerate n-type semiconductor.
  • Another participant asserts that the Fermi level is uniform throughout the system at equilibrium, but acknowledges that the energy of the conduction and valence bands relative to the Fermi level varies with doping concentration.
  • A later reply elaborates that while the Fermi level remains constant at equilibrium, the relationship between the Fermi energy and the conduction/valence band energies is influenced by both doping concentration and the doping profile, particularly in the context of a p-n junction.
  • This participant also notes that in the depletion region, the difference between the conduction band energy and the Fermi level changes due to electrostatic potential differences caused by unbalanced charge.
  • Another participant expresses confusion regarding the physical reasons behind changes in the intrinsic Fermi level, despite understanding the variations in the conduction and valence band positions.

Areas of Agreement / Disagreement

Participants generally agree that the Fermi level is uniform at equilibrium, but there is no consensus on the physical interpretation of how the intrinsic Fermi level changes with doping concentration gradients. Multiple viewpoints on the relationship between Fermi levels and band energies remain present.

Contextual Notes

The discussion includes assumptions about equilibrium conditions and the influence of doping profiles, but does not resolve the complexities involved in calculating the effects of doping concentration gradients on Fermi levels.

HARSHARAJ
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In a degenerate n type semiconductor, when the doping concentration has a gradient(say -ve gradient), then how fermi energy level and intrinsic Fermi energy levels will depend upon the concentration gradient?
~If anyone knows anything about it, kindly help.
 
Last edited:
Hi, .
Fermi level is a property of the system at equilibrium so its value is the same everywhere within the system ( if there is no current flow).

However, the energy of the conduction and valence bands relative to the Fermi level does depend on the doping concentration.

Check this link. It gives you all the equations and graphs.
http://ecee.colorado.edu/~bart/book/extrinsi.htm
 
My apology. I just realized I gave you an incomplete answer.

It is true that at equilibrium, the Fermi level is the same everywhere in the system.
However, the difference between the Fermi energy and conduction/valence band energy depends not only on the doping concentration but also on the doping profile.
Take, for example, an energy diagram of a p-n junction at equilibrium. This is a case when you have a change of doping concentration. In the n - region and far away from the junction, the conduction band bottom is close to the Fermi level. On the other side (p - region), the top of the conduction band is close to the Fermi level. But in the depletion mode, you have an electrostatic potential that adds to the value of the conduction band bottom (and valence band top).
But in the depletion region, the difference between the bottom of the conduction band and Fermi level changes from the bulk p region value to the bulk n region value. The change of the electron energy is due to potential energy difference because of unbalanced charge in the depletion region.

So, in general, the difference between the energy of a conduction (or valence) band will depend not only on local dopant concentration but also double integrated net charge density. So, given the dopant concentration profile, you really have to solve the Poisson-Boltzmann equation to get the answer.


Henryk
 
Thank you for the reply, the answer that you provided regarding the position of Ef and variation in position in Ec and Ev, I have also arrived there but what I didn't understood (physically) quite well is how and why the intrinsic fermi level changes.
 

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