Compensation Doping: Adding Boron Atoms

[jisbon]

Homework Statement

The intrinsic carrier concentration of silicon at room temperature is $1.43*10^{10}$ per cubic centimeter
If boron atoms with the concentration of $3*10^{17}$per cubic centimeter are added to the intrinsic Si, estimate the electron and hole concentration at room temperature.

Relevant Equations

Intrinsic: n=p=ni
Extrinisc: np=ni^2

Hi all,

So I'm confused how do I do this question when I add boron atoms. This is my take/attempt on this question though.

Since there are much more boron atoms per cubic centimeters as compared to the number of holes, can I assume that p = $3*10^{17}$ now, and simply find n by using np=ni^2 whereby n = $(1.43*10^{10})^2 / 3*10^{17}$ ?

Cheers

 

[mfb]

Looks good.