DC Sputtering of Silicon without Magnetron

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SUMMARY

This discussion addresses the challenges of sputtering Silicon and Aluminum Oxide onto substrates using DC methods without a Magnetron. The participants suggest utilizing silicon samples as electrodes to create plasma, with a recommended voltage of approximately 318V derived from an AC 220V source. The conversation highlights the necessity of maintaining a small residual pressure for plasma ignition and discusses alternative methods, such as modifying a CRT monitor for enhanced beam power. The feasibility of these approaches is debated, with a suggestion that acquiring a regular magnetron may ultimately be simpler.

PREREQUISITES
  • Understanding of DC sputtering techniques
  • Knowledge of plasma physics and ignition requirements
  • Familiarity with vacuum systems and residual pressure management
  • Experience with high-voltage electrical systems
NEXT STEPS
  • Research methods for creating plasma using silicon electrodes
  • Investigate the voltage requirements for sputtering Silicon and Aluminum Oxide
  • Explore modifications to CRT monitors for enhanced sputtering applications
  • Learn about the advantages of using Magnetron sputtering systems
USEFUL FOR

Materials scientists, engineers in thin-film deposition, and researchers exploring alternative sputtering techniques without Magnetron systems.

LancelotSE
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My question has to do with Sputtering Silicon onto a substrate using DC without a Magnetron. The system in the lab I'm at isn't currently capable of RF sputtering and the status of the magnetron is unknown. Is there any way to use a sputter with DC to deposit Silicon onto a substrate?

On the off chance anyone knows, is there a way to sputter Aluminum Oxide onto a substrate without a magnetron, RF, or exposing the chamber to the atmosphere? We need a deposition that's around 50nm-250nm thick.

Any help would be appreciated!
 
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Due to silicon conductivity, you may try use silicon samples as electrodes to create plasma between them. Some small residual pressure need for igniting at least by cathode ray.
I don't remember exact numbers, when I experimented, something about 70V was enough for Hg plasma ignition without prior heating for Thungsten electrodes at about 0.1 Pa. Your case will require some more voltage due to increased Silicon work function and ionization energy, but, I suppose DC 318V achievable from AC 220V is quite enough. Don't forget about nonlinear V/I function, use inductance or resistance.
 
For dielectric compounds at high vacuum I would try modify regular CRT monitor to increase beam power or decrease scanning rate. Remove the front glass and point it to the sample. But don't you think it will be easier than get regular magnetron?
 

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