- #1
IRobot
- 87
- 0
Hi,
I am interested in a junction between n doped and intrinsic GaAs, specifically the localization and width of the depletion zone (where the built-in E field is). In a p-n junction the depletion zone is calculated under the condition of electro-neutrality, if I see i-GaAs as really really low doped p-GaAs, can I consider that the depletion zone will be mostly in the i-GaAs? (I have in mind a juxtaposition of one layer of n-GaAs with a layer of i-GaAs which has twice the width of the first one)
I am interested in a junction between n doped and intrinsic GaAs, specifically the localization and width of the depletion zone (where the built-in E field is). In a p-n junction the depletion zone is calculated under the condition of electro-neutrality, if I see i-GaAs as really really low doped p-GaAs, can I consider that the depletion zone will be mostly in the i-GaAs? (I have in mind a juxtaposition of one layer of n-GaAs with a layer of i-GaAs which has twice the width of the first one)