Junction diode - unequally doped sides

[hitcool007]

Why does the depletion layer penetrate a lightly doped side of a p-n junction diode?? Consider that there is a lightly doped p-side and a heavily doped n-side in a p-n junction diode , which is connected to a dc power supply in reversed biased. Now, I've read that depletion layer penetrates the p-side in this case. But i could not figure out the reason behind it. So, Can u please explain me the mechanism involved in terms of the movement of electrons in the circuit.
Im in a faulty assumption that the side in which the diode is more heavily doped is bound to be penetrated more by the depletion layer..
(-I've completed my intermediate)

 

[mfb]

The sum of electrons and holes stays constant (the whole thing does not get a significant net charge). If the hole density is larger, the volume with holes is smaller, and vice versa.

 

[hitcool007]

ok,, but i dint get the answer to my question!

 

[mfb]

In this case, I don't understand the question. You have depletion at both sides as electrons from one side move into the holes at the other side, unless your diode is in a conducting mode.

 

[PJC01]

The depletion layer in a p-n junction diode is formed due to the diffusion of charge carriers (electrons and holes) from the heavily doped side to the lightly doped side. In a p-n junction diode, the p-side is doped with a higher concentration of holes, while the n-side is doped with a higher concentration of electrons.

When the diode is connected to a DC power supply in reverse bias, the positive terminal of the power supply is connected to the n-side of the diode, while the negative terminal is connected to the p-side. This creates an electric field that opposes the diffusion of charge carriers.

As a result, the holes in the p-side are attracted to the negative terminal, while the electrons in the n-side are attracted to the positive terminal. This further depletes the charge carriers in the depletion layer, creating a wider and deeper depletion layer on the p-side.

Therefore, the depletion layer penetrates the p-side more than the n-side because of the higher concentration of holes and the stronger electric field created by the reverse bias. This mechanism is crucial in allowing the diode to function as a one-way valve for current flow, which is essential for its applications in electronic circuits.